BUK9611-80E datasheet

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О ДАТАШИТЕ

• Маркировка
  BUK9611-80E
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BUK9611-80E Mfr Package Description: PLASTIC, D2PAK-3/2 Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: TIN Terminal Position: SINGLE Number of Terminals: 2 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 75 A DS Breakdown Voltage-Min: 80 V Avalanche Energy Rating (Eas): 145 mJ Drain-source On Resistance-Max: 0.0110 ohm Pulsed Drain Current-Max (IDM): 327 A
• Количество страниц
  13 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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